Core specifications
The STP110N8F6 uses STMicroelectronics’ advancedSTripFET™ F6 Technology, achieving extremely low on-resistance and gate charge through a new trench gate structure.Its core parameters are as follows:
voltage and current: Drain-source voltage80V, continuous drain current110A(Tc=25℃), the pulse drain current can reach up to440A, gate-source voltage range±20V。
On-resistance and power consumption: On-resistance Rds(on) typical value5.6mΩ, the maximum value6.5mΩ(@Vgs=10V, Id=55A).Power dissipation200W(Tc), junction temperature range-55℃ to 175℃。
switching characteristics：Typical value of gate charge Qg150nC(@Vgs=10V), input capacitance Ciss typical value9130pF(@Vds=40V), the reverse transmission capacitance Crss is225pF。
Thresholds and Encapsulation: Gate threshold voltage Vgs(th) maximum4.5V(@Id=250µA), usingTO-220-3Through-hole packaging, compliant with RoHS environmental standards.
Core advantage: STripFET F6 technology empowers high-power switching applications
The core value of STP110N8F6 in product design is concentrated inLow on-resistancewithHigh current carrying capacityon the combination.The trench gate structure based on STripFET™ F6 technology enables this chip to achieve an on-resistance as low as 6.5mΩ at a high current level of 110A, effectively reducing conduction losses and heat, and improving system efficiency.The low gate charge of 150nC means faster switching speed and lower driving power consumption, making it particularly outstanding in DC-DC converters and synchronous rectification circuits that require high-frequency switching.
Gundam440A pulsed drain currentability, enabling it to calmly cope with large current impact scenarios such as motor starting and load mutation.The power dissipation capability of 200W and the wide junction temperature range of -55℃ to 175℃ provide sufficient safety margin for high power density design.At the same time, the device hasHigh avalanche toleranceand100% avalanche tested, ensuring reliable operation under extreme stress conditions.
Typical application scenarios
This chip has a wide range of applications and is especially suitable for high-power switching applications that require high current processing and low power consumption.
Switching power supply and DC-DC converterIt is one of its core application directions.In the step-down or synchronous rectification circuits of server power supplies and communication power supplies, STP110N8F6 is often used as the main switch tube.Its low on-resistance and low gate charge characteristics enable it to effectively reduce losses and improve the overall efficiency of the power supply in high-frequency switching applications.
Motor drive and controlThis chip is also widely used.In the drive circuits of high-power brushed DC motors, brushless DC motors (BLDC), and inverter bridge arm switches, the STP110N8F6's 110A continuous current capability and 440A pulse current capability enable it to calmly handle the large current requirements during motor starting and operation.
Industrial Power Supply and Power ControlIn terms of industrial automation equipment, high-power lighting systems and audio equipment, this chip's high current handling capability and low on-resistance make it an ideal choice for power management.Photovoltaic inverters and renewable energy systemsAlso relying on this device, micro solar inverters take advantage of its high switching speed and low loss characteristics to achieve efficient DC-AC conversion.power toolsIt is also commonly seen in high-power motor drive circuits.
Selection comparison
STP110N8F6 belongs to STMicroelectronics' STP series power MOSFET product line. The same series and cross-brands provide a wealth of alternatives for project selection.
Same series, same package, different current versions：STP100N8F6It is a 100A version with Rds(on) of 8mΩ and power consumption of 176W. It is suitable for cost-sensitive projects with slightly lower current requirements.
Upgrade and replace the same series：STP140N8F7The 140A version uses the updated STripFET F7 technology, which has lower on-resistance and is suitable for scenarios that require higher current capabilities.
Cross-brand substitution of the same series and specifications：FHP100N8F6AWith a voltage resistance of 85V and a current of 120A, it can achieve parameter-level substitution in various power supply designs.VBM1805It has achieved comprehensive surpasses in core indicators such as on-resistance and current capacity.VBM1606Provides 120A current headroom and optimized on-resistance.In addition,IRF3205andIRLB3034Also a common functional equivalent alternative.
write at the end
With 80V drain-source voltage, 110A continuous drain current, 6.5mΩ low on-resistance and 200W power dissipation capability, STMicroelectronics' STP110N8F6 provides a cost-effective power switching solution in high-power applications such as switching power supplies, motor drives, DC-DC converters and inverters.The low on-resistance and low gate charge characteristics brought by STripFET™ F6 technology allow this chip to demonstrate extremely high engineering maturity in high-frequency, high-current power conversion scenarios.
As a chip agent distributor that has been deeply involved in the electronic components industry since 2011, Shenzhen Hongmai Electronics Co., Ltd. has long-term stock of STMicroelectronics STP110N8F6 and full-scale STP series power MOSFETs in original stock. It also supplies STP100N8F6, STP140N8F7 and other different current level versions and domestic compatible alternative models, and supports factory batch direct shipment, small batch samples and technical selection assistance.If you need to inquire about prices or need to know the selection suggestions of different current levels of the same series, please feel free to contact us (tel: 0755-23815611, QQ 2355878270).Shenzhen Hongmai Electronics Co., Ltd.
