Core specifications
K4B2G1646Q-BCK0 belongs to Samsung's DDR3 Q-die product line and is designed with advanced DDR3 SDRAM architecture.The core storage capacity is2Gbit (i.e. 256M bytes), the internal organization is128M × 16 bits, the data bus width is 16 bits.Integrated within8 Banks, supports 8n prefetch architecture and double data rate transmission.
In terms of data rate, this model supports up to2133Mbps(DDR3-2133), corresponding clock frequency1066MHz.At the same time, it is backward compatible with multiple speed levels such as DDR3-1600 (CL11-11-11), DDR3-1333, DDR3-1066 and DDR3-800.The maximum access time is0.225ns。
In terms of working voltage, the1.5V ± 0.075VPowered by standard DDR3.The package adopts96-ball FBGA(TFBGA), with dimensions of13.3mm×7.5mm×1.1mm.Operating temperature range covered-40℃ to 95℃wide temperature range.supportAutomatic refresh, self-refresh, prechargeand other functions, compliant with JEDEC standards.
Core advantages
The core value of K4B2G1646Q-BCK0 in product design is concentrated inhigh ratewithWide temperature reliabilityon the combination.
Compared with early DDR3-1333/1600 solutions, the maximum data rate of 2133Mbps gives it obvious advantages in multi-task concurrent processing and high-speed data caching scenarios.For communication equipment such as routers and switches that require frequent data packet forwarding, higher memory bandwidth means lower latency and smoother data throughput.
The wide operating temperature range of -40℃ to 95℃ enables it to operate stably in environments with large temperature differences such as industrial sites and outdoor base stations.It also supports multiple speed levels (DDR3-800 to DDR3-2133), providing flexible selection space for projects with different performance requirements.The 96-FBGA compact package is a standard size among similar DDR3 chips and is suitable for mainstream PCB layout.In addition, the chip supportsInternal self-calibrationandOn-chip terminationand other advanced features effectively ensure the signal integrity and stability of the system.
Typical application scenarios
The market coverage of this memory particle highly overlaps with areas such as network communications, industrial control, and consumer electronics.
Network communication equipmentIt is its core application direction.In access network equipment such as routers, switches, and optical modems, K4B2G1646Q-BCK0 serves as the main memory of the system, providing sufficient bandwidth support for data packet caching and protocol stack operation.Industrial Control and Embedded SystemsThis chip is also widely used in equipment such as industrial tablets, PLC controllers, data acquisition terminals and human-machine interfaces. Its wide temperature operating range and long-term stable supply guarantee make it a common choice in the industrial control industry.
computer memory moduleIn terms of memory, it is used as a component unit to build the system's main memory on the memory stick of desktop computers and workstations.data center server, used to support virtualized environments and medium-load data processing tasks.Consumer electronics and smart terminalsIn terms of performance, it can also be used as system main memory in smart TVs, set-top boxes and other devices.
Model selection comparison
K4B2G1646Q-BCK0 belongs to Samsung's DDR3 product line. The same series provides a wealth of packages, temperature grades and speed branches for project selection.
Same series, same capacity, different speed levels：K4B2G1646Q-BCMAIt is another speed grade version of the same series;K4B2G1646Q-BCNBFor DDR3-1600 version.K4B2G1646Q-BYK0It also supports 1.35V DDR3L low-voltage power supply.
Same series, same capacity, different temperature levels：K4B2G1646Q-BMK0It is an industrial wide temperature version (-40℃ to 95℃);K4B2G1646Q-BCK0It is standard commercial grade (0℃ to 85℃).Same series and same package capacity upgrade：K4B4G1646D-BCK0It is a 4Gb (512MB) capacity version.
Cross-brand functional replacement：MicronMT41J128M16JT-125G:K, South AsiaNT5CB256M16CP-FL, HynixH5TQ2G63FFRThe other models are basically equivalent in function to K4B2G1646Q-BCK0, and can realize function replacement.
write at the end
With 2Gb capacity, x16-bit width, 2133Mbps data rate, -40℃ to 95℃ wide temperature range and 96-FBGA compact package, Samsung K4B2G1646Q-BCK0 provides a cost-effective DDR3 memory solution in scenarios such as network communications, industrial control and embedded systems.Its multi-speed level support and wide operating temperature range allow this chip to demonstrate extremely high engineering adaptability in different platforms and environments.
As a chip agent distributor that has been deeply involved in the electronic components industry since 2011, Shenzhen Hongmai Electronics Co., Ltd. has long-term stock of Samsung K4B2G1646Q-BCK0 and Samsung's full range of DDR3 memory chips in original stock, and also supplies K4B2G1646Q-BCMA, K4B2G1646Q-BMK0 (industrial wide temperature grade) and other different speed and temperature grade versions, as well as compatible memory replacement solutions from brands such as Micron, Nanya, Hynix, etc., support factory batch direct shipment, small batch samples and technical selection assistance.If you need to inquire or need to know the selection suggestions of different speed grades and temperature grades of the same series, please feel free to contact us at any time (tel: 0755-23815611, QQ 2355878270).Shenzhen Hongmai Electronics Co., Ltd.
