Core specifications
H5AN4G8NBJR-XNC belongs to SK Hynix's DDR4 SDRAM product line and is a high-density, high-bandwidth synchronous dynamic random access memory.
Storage capacity and organization：4Gbit (i.e. 512M bytes), adopt512M × 8 bitsorganizational structure.The x8-bit wide configuration makes it compatible with mainstream computing and embedded platforms.
data rate：3200Mbps, corresponding to the clock frequency1.6GHz, belonging to the DDR4-3200 speed class.
Working voltage：1.14V to 1.26V, the typical value is1.2V.Compared with the 1.5V of the previous generation DDR3, the power consumption advantage is significant, and it is more suitable for compact devices that require heat dissipation and battery life.
access time：18ns。
working temperature：0℃ to 95℃。
encapsulation：78-ball FBGA(Fine pitch ball grid array).The package size is7.5mm×11mm, compact and suitable for high-density PCB layout.
Advanced features: Supports DDR4 standard functions such as automatic refresh and self-refresh.
Core advantage: a balance between high speed and compact packaging
The core value of H5AN4G8NBJR-XNC in product design is concentrated inhigh speedwithCompact packageon the combination.The data rate of 3200Mbps provides sufficient bandwidth for multi-task concurrent processing and high-speed data caching scenarios.For communication equipment such as routers and switches that require frequent data packet forwarding, as well as human-computer interaction interfaces that require fast response, higher memory bandwidth means lower latency and smoother data throughput.
In terms of power consumption and volume control, the power consumption advantage brought by the low operating voltage of 1.2V is particularly prominent in equipment that operates 24/7 - lower power consumption means lower heat generation and higher system stability.The 7.5mm × 11mm 78-FBGA package is compact in size among similar DDR4 particles and is very suitable for embedded board and compact module designs with limited PCB space.
In addition, the chip supports advanced features of the DDR4 standard such as write equalization, CRC check, ZQ calibration, and dynamic on-chip termination (ODT), which effectively improves the integrity of high-speed signal transmission and reduces the difficulty of PCB layout debugging.
Typical application scenarios
The market coverage of this memory particle highly overlaps with fields such as industrial control, network communications, and servers.
Industrial Control and Embedded SystemsIt is one of its core application directions.Among equipment such as industrial tablets, PLC controllers, data acquisition terminals and edge computing gateways, the operating temperature range of 0°C to 95°C and stable supply guarantee make it a common choice in the industrial control industry.
Network communication equipmentThis chip is also widely used.In access network equipment such as routers, switches, and optical modems, H5AN4G8NBJR-XNC serves as the system's main memory, providing sufficient bandwidth support for data packet caching and protocol stack operation.
Servers and Data CentersThis particle is also commonly used.In servers that require high-density memory, 4Gb capacity can effectively support virtualized environments and medium-load data processing tasks.
Consumer Electronics and Storage DevicesOn the other hand, in some high-performance solid-state drives (SSD), this particle is used as a cache.In addition, it can also be used as system main memory in smart TVs, set-top boxes and other devices.
Model selection comparison
H5AN4G8NBJR-XNC belongs to the SK Hynix DDR4 product line. The same series provides a wealth of speed grades, temperature ranges and packaging branches for project selection.
Same series, same capacity, same speed, different suffixes：H5AN4G8NBJR-UHCIt is another suffixed version of the same series;H5AN4G8NBJR-VKCIt is the 2666Mbps speed grade version;H5AN4G8NBJR-VKIAlso at 2666Mbps speed level.
Same series, same capacity, different bit widths：H5AN4G4NBJR-xxCFor x4 bit wide version;H5AN4G6NBJR-xxCFor the x16-bit wide version.The capacities of the three are all 4Gbit, which can be flexibly selected according to the system's demand for data bus width.
Cross-brand functional replacement：SamsungK4A4G165WE-BCRC, MicronMT40A512M16GE-083EThe other models are basically equivalent in function to H5AN4G8NBJR-XNC, and can realize function replacement.
write at the end
SK Hynix H5AN4G8NBJR-XNC provides cost-effective DDR4 memory solutions in scenarios such as industrial control, network communications and embedded systems with 4Gbit capacity, x8 bit width, 3200Mbps data rate, 1.2V low voltage and 78-FBGA compact package.Its balanced performance and compact package size allow this chip to demonstrate extremely high engineering adaptability in different platforms and application environments.
As a chip agent distributor that has been deeply involved in the electronic components industry since 2011, Shenzhen Hongmai Electronics Co., Ltd. has long-term stock of SK Hynix H5AN4G8NBJR-XNC and SK Hynix’s full range of DDR4 memory chips in original stock.We also supply H5AN4G8NBJR-UHC, H5AN4G8NBJR-VKC and other different suffix and speed versions, as well as compatible memory replacement solutions for Samsung, Micron and other brands, and support factory batch direct shipment, small batch samples and technical selection assistance.If you need to inquire about prices or need to know the selection suggestions of different speed levels and bit widths of the same series, please feel free to contact us at any time (tel: 0755-23815611, QQ 2355878270).Shenzhen Hongmai Electronics Co., Ltd.
